Datasheet Details
| Part number | 2SC1722 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1722-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1722.
| Part number | 2SC1722 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1722-INCHANGE.pdf |
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·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ·TV horizontal/vertical drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 1.8 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1722 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;
IB= 5mA VBE(ON) Base-Emitter ON Voltage IC= 50mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1722 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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