Inchange Semiconductor 2SC1728
Silicon NPN Power Transistor
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min)●Low Saturation Voltage - : VCE(sat)= 0.3V(Max)@ IC=1A, IB= 50mA
●High DC Current Gain- : hFE= 98-649@ IC= 0.1A
APPLICATIONS
●Designed for audio frequency amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V ICM Collector Current-Peak 1.5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 0.95 W 7.9 150 ℃ Tstg Storage Temperature Range -50~150 ℃ isc website: 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1728ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise spec