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2SC1755 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min) DC Current Gain- : hFE= 40-200 @IC= 10mA, VCE= 10V High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 40-200 @IC= 10mA, VCE= 10V ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma, video , audio output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 200 mA ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 700 mA 1.