Inchange Semiconductor 2SC1755
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1755 |
|---|---|
| Datasheet | 2SC1755 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min)●DC Current Gain- : hFE= 40-200 @IC= 10mA, VCE= 10V
●High Current-Gain Bandwidth Product
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for color TV chroma, video , audio output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 200 mA ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 700 mA 1.2 W 15 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SC1755 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1755ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA ICBO Collector Cutoff Cur...