Datasheet Details
| Part number | 2SC1785 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.36 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1785-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1785.
| Part number | 2SC1785 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.36 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1785-INCHANGE.pdf |
|
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·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 15 A 100 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.25 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1785 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage IC= 10A;
IB= 1.0A ICBO Collector Cutoff Current VCB= 200V, IE= 0 ICEO Collector Cutoff Current VCE= 200V, IB= 0 IEBO Emitter Cutoff Current VEB= 6V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1785 | SILICON POWER TRANSISTOR | SavantIC |
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