Datasheet Details
| Part number | 2SC1826 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.83 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1826-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1826.
| Part number | 2SC1826 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.83 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1826-INCHANGE.pdf |
|
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·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 30 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1826 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1826 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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| 2SC1894 | NPN Transistor |
| 2SC1895 | NPN Transistor |