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2SC1847 Datasheet PDF

Inchange Semiconductor 2SC1847

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC1847
Datasheet 2SC1847 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC1847 datasheet page 1 preview

DESCRIPTION

●High Collector Current-IC= 1.5A
●Low Saturation Voltage : VCE(sat)= 1V(Max)@ IC= 2.0A, IB= 0.2A
●Good Linearity of hFE
●Complement to Type 2SA0886
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.2*1 W 5*2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1847 isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1847

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=...
2SC1847 page 2 preview