Datasheet4U Logo Datasheet4U.com

2SC1880 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC1880.

General Description

·High DC Current Gain ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 120 mA 65 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SC1880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ,IB= 8mA ICBO Collector Cutoff Current VCB= 100V, IE= 0 IEBO Emitter Cutoff Current VEB= 5V;

IC= 0 hFE DC Current Gain IC= 2A ;

2SC1880 Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
SavantIC Logo 2SC1880 SILICON POWER TRANSISTOR SavantIC

More Datasheets from Inchange Semiconductor

Part Number Description
2SC1826 NPN Transistor
2SC1828 NPN Transistor
2SC1846 NPN Transistor
2SC1847 NPN Transistor
2SC1848 NPN Transistor
2SC1863 NPN Transistor
2SC1868 NPN Transistor
2SC1893 NPN Transistor
2SC1894 NPN Transistor
2SC1895 NPN Transistor