Inchange Semiconductor 2SC1881K
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1881K |
|---|---|
| Datasheet | 2SC1881K Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)
●Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max)@ IC= 2.5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for High gain amplifier power switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1881K isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SC1881KELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 V(BR)EBO Emitter –Base Breakdow...