Datasheet Details
| Part number | 2SC1895 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1895-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1895.
| Part number | 2SC1895 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 173.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1895-INCHANGE.pdf |
|
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·With TO-3 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 6 A 50 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1895 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 1.0A VBE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1895 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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