Datasheet Details
| Part number | 2SC1904 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.67 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1904-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1904.
| Part number | 2SC1904 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.67 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1904-INCHANGE.pdf |
|
|
|
·Low collector to emitter saturation voltage ·Output of 1W can be obtained by a complementary with 2SA899 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 1 W 4 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1904 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA;
IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 10mA;
IB= 1mA ICBO Collector Cutoff Current VCB= 140V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1904 | SILICON POWER TRANSISTOR | SavantIC |
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