Datasheet Details
| Part number | 2SC1913 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1913-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1913.
| Part number | 2SC1913 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1913-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency high power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.0 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1913 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
IB= 30mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC1913 | SILICON POWER TRANSISTOR | SavantIC |
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2SC1913A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC1929 | NPN Transistor |
| 2SC1942 | NPN Transistor |
| 2SC1953 | NPN Transistor |
| 2SC1969 | Silicon NPN Power Transistor |
| 2SC1975 | NPN Transistor |