Datasheet Details
| Part number | 2SC1929 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1929-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1929.
| Part number | 2SC1929 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1929-INCHANGE.pdf |
|
|
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·Si NPN planar ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF output for direct main operation TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.4 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1929 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
IB= 50mA VBE(on) Base-Emitter On Voltage IC= 100mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC1929 | SILICON POWER TRANSISTOR | SavantIC |
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