Inchange Semiconductor 2SC1942
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1942 |
|---|---|
| Datasheet | 2SC1942 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage-VCEX= 1500V(Min.)●Collector Current- IC = 3.0A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature -45~150 ℃ 2SC1942 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1942ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA;RBE=∞ V(BR)EBO Emitter -Base Breakdown Voltage IE=10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=2.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB...