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2SC1942 - NPN Transistor

General Description

High Voltage-VCEX= 1500V(Min.) Collector Current- IC = 3.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits .

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2SC1942 Silicon NPN Transistor Hitachi Semiconductor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCEX= 1500V(Min.) ·Collector Current- IC = 3.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature -45~150 ℃ 2SC1942 isc website：www.iscsemi.