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isc Silicon NPN RF Power Transistor
INCHANGE Semiconductor
2SC1969
DESCRIPTION ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage RBE= ∞
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
6
A
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature Range
20
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Ju
2SC1969 Datasheet
