Inchange Semiconductor 2SC1971
Silicon NPN Power Transistor
| Part No. | 2SC1971 |
|---|---|
| Datasheet | 2SC1971 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V●High Reliability
APPLICATIONS
●Designed for RF power amplifiers on VHF band mobile radio applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC w w s c s i . w 17 4 2 12.5 1.5 150 -55~150 V V n c . i m e A W Collector Power Dissipation @Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 83 10 UNIT ℃/W ℃/W isc Website： INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1971 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA, IE= 0 35 V V(BR)CEO Collector-E...