Collector-Base Breakdown Voltage-
: V(BR)CBO= 300V(Min.)
Large collector power dissipation
Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
1W output in class-A operation
Line-operated AF amplifier chrominance output
ABSOLUTE M
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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 300V(Min.) ·Large collector power dissipation
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
·1W output in class-A operation ·Line-operated AF amplifier chrominance output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCER
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
100
mA
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
150
mA
10
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2085
isc website：www.iscsemi.
2SC2085 Datasheet
