Inchange Semiconductor 2SC2085
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2085 |
|---|---|
| Datasheet | 2SC2085 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Base Breakdown Voltage- : V(BR)CBO= 300V(Min.)●Large collector power dissipation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●1W output in class-A operation●Line-operated AF amplifier chrominance output
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCER Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 100 mA ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 mA 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2085 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SC2085ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCER Collector-Emitter Voltage IC= 5mA; RBE= 3kΩ 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Volt...
