2SC2123
2SC2123 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V (Min)
- High Current Capability
- High Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for TV horizontal output and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~150 ℃
2SC2123 isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
