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2SC2168 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpos

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Datasheet Details

Part number 2SC2168
Manufacturer INCHANGE
File Size 226.72 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SC2168 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
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