Datasheet Details
| Part number | 2SC2209 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.23 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2209-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2209 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.23 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2209-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·High Collector Power Dissipation ·plement to Type 2SA963 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2209 isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2209 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2209 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SC2209 | SILICON POWER TRANSISTOR | SavantIC |
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