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2SC2238B Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Collector-Emitter Breakdown Voltage : V(BR)CEO=200V ·Good Linearity of hFE ·plement to Type 2SA968B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC2238B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2238B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ;

IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA ;

2SC2238B Distributor