2SC2238B - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO=200V Good Linearity of hFE Complement to Type 2SA968B Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC2238B APPLICATIONS Power amplifier applications Driver sta

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Datasheet Details

Part number	2SC2238B
Manufacturer	Inchange Semiconductor
File Size	218.21 KB
Description	NPN Transistor
Datasheet	2SC2238B Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
2SC2238B	NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=200V ·Good Linearity of hFE ·Complement to Type 2SA968B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC2238B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.