Datasheet Details
| Part number | 2SC2238B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2238B-INCHANGE.pdf |
|
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2238B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2238B-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage : V(BR)CEO=200V ·Good Linearity of hFE ·plement to Type 2SA968B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC2238B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2238B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
![]() |
2SC2238B | Silicon NPN Transistor | Toshiba |
![]() |
2SC2238B | SILICON POWER TRANSISTOR | SavantIC |
![]() |
2SC2238 | Silicon NPN Transistor | Toshiba |
![]() |
2SC2238 | SILICON POWER TRANSISTOR | SavantIC |
![]() |
2SC2238A | Silicon NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| 2SC2238B | NPN Transistor |
| 2SC2238 | NPN Transistor |
| 2SC2238A | NPN Transistor |
| 2SC2239 | NPN Transistor |
| 2SC2209 | NPN Transistor |
| 2SC2229 | NPN Transistor |
| 2SC2243 | NPN Transistor |
| 2SC2244 | NPN Transistor |
| 2SC2245 | NPN Transistor |
| 2SC2246 | NPN Transistor |