Inchange Semiconductor 2SC2242
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2242 |
|---|---|
| Datasheet | 2SC2242 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : V(BR)CBO= 300V(Min)●High Current-Gain—Bandwidth Product: fT= 20MHz(Min)@IC= 20mA
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applications●Color TV sound output applications
●Recommended for sound output stage in line operated TV
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 150 mA IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2242 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2242ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 VCE(sat) Collector...