Inchange Semiconductor 2SC2247
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2247 |
|---|---|
| Datasheet | 2SC2247 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power switching●Power amplification
●Power driver
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 40 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2247 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2247ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.2 V VBE(sat) Base-Emitter Satur...