Inchange Semiconductor 2SC2258
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2258 |
|---|---|
| Datasheet | 2SC2258 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min)●High Current-Gain Bandwidth Product
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For high breakdown voltage general amplification●For video output amplification
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.15 A 4 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2258 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2258ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Vltage IE= 0.1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage I...