Download 2SC2258 Datasheet PDF
Inchange Semiconductor
2SC2258
DESCRIPTION - High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) - High Current-Gain Bandwidth Product - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - For high breakdown voltage general amplification - For video output amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ Junction Temperature 4 W ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2258 isc website:.iscsemi.cn...