Datasheet4U Logo Datasheet4U.com

2SC2258 - NPN Transistor

Datasheet Summary

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high breakdown voltage general amplification For video output amplification

📥 Download Datasheet

Datasheet preview – 2SC2258

Datasheet Details

Part number 2SC2258
Manufacturer INCHANGE
File Size 185.55 KB
Description NPN Transistor
Datasheet download datasheet 2SC2258 Datasheet
Additional preview pages of the 2SC2258 datasheet.

📁 Similar Datasheet

  • 2SC2258 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC2258 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2258 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC2258A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2258A - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC2250 - TRANSISTOR (Fuji)
  • 2SC2200 - SILICON NPN TRANSISTOR (Toshiba)
  • 2SC2204 - SILICON NPN TRANSISTOR (Toshiba)
  • 2SC2206 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC2209 - Silicon NPN Transistor (Panasonic Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.15 A 4 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2258 isc website：www.iscsemi.
Published: |