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2SC2260 - NPN Transistor

Datasheet Summary

Description

High Power Dissipation- : PC= 80W(Max.)@TC=25℃ Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) Complement to Type 2SA980 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general purpose applications.

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Datasheet Details

Part number 2SC2260
Manufacturer INCHANGE
File Size 185.08 KB
Description NPN Transistor
Datasheet download datasheet 2SC2260 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Complement to Type 2SA980 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SC2260 isc website：www.iscsemi.
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