Inchange Semiconductor 2SC2260
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2260 |
|---|---|
| Datasheet | 2SC2260 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Power Dissipation- : PC= 80W(Max.)@TC=25℃●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)
●Complement to Type 2SA980
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SC2260 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V 2SC2260 MIN TYP.