High Power Dissipation-
: PC= 80W(Max.)@TC=25℃
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min.)
Complement to Type 2SA981
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min.) ·Complement to Type 2SA981 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
3
A
80
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SC2261
isc website：www.iscsemi.
2SC2261 Datasheet
