Inchange Semiconductor 2SC2314
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2314 |
|---|---|
| Datasheet | 2SC2314 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω●Collector Current- :IC=1.5A
●Low Saturation Voltage : VCE(sat)=0.6V(MAX)@ IC=0.5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power AmplifierAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 75 V VCER Collector-Emitter Voltage RBE=150Ω 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2314 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=0.5A; IB= 0.05A ICBO Collector Cutoff Current VCB= 40V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 500mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 0.5V● hFE Classifications D E F 60-120 100-200 160-320 2SC2314 MIN TYP.
