Datasheet4U Logo Datasheet4U.com

2SC2331 - NPN Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A Fast Switching Speed Complement to Type 2SA1008 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulato

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2331 Silicon Power Transistor NEC
2SC2331 SILICON POWER TRANSISTOR SavantIC
2SC2330 NPN SILICON EPITAXIAL TRANSISTOR ETC
2SC2330 HG RF POWER TRANSISTOR HGSemi
2SC2333 PNP Transistor NEC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2333 NPN Transistor
2SC2334 NPN Transistor
2SC2335 NPN Transistor
2SC2336 NPN Transistor
2SC2337 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SC2331 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Fast Switching Speed ·Complement to Type 2SA1008 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak 4.0 A IB Base Current-Continuous 1.0 A Collector Power Dissipation@ Ta=25℃ 1.