Inchange Semiconductor 2SC2331
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2331 |
|---|---|
| Datasheet | 2SC2331 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A●Fast Switching Speed
●Complement to Type 2SA1008
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak 4.0 A IB Base Current-Continuous 1.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@ TC=25℃ 15 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2331ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Su...
