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2SC2344 - NPN Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.3V(Typ.)@ IC= 0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) Complement to Type 2SA1011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.3V(Typ.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Complement to Type 2SA1011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.