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2SC2361 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- :V(BR)CEO= 70(V)(Min.) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

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Datasheet Details

Part number 2SC2361
Manufacturer INCHANGE
File Size 180.22 KB
Description NPN Transistor
Datasheet download datasheet 2SC2361 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2361 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 70(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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