2SC2371 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for video applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2371 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

