2SC2383 Description
IB= 50mA VBE(on) Base-Emitter On Voltage IC= 5mA ; VCE= 5V ICBO Collector Cutoff Current IEBO Emitter cut-off current VCB= 160V; IE= 0 VEB = 5V,IC = 0 hFE DC Current Gain IC= 200mA.
| Part number | 2SC2383 |
|---|---|
| Download | 2SC2383 Datasheet (PDF) |
| File Size | 171.71 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC2383 | TRANSISTOR | |
Unisonic Technologies |
2SC2383 | NPN EPITAXIAL SILICON TRANSISTOR |
Micro Commercial Components |
2SC2383-O | NPN Transistor |
Micro Commercial Components |
2SC2383-R | NPN Transistor |
Micro Commercial Components |
2SC2383-Y | NPN Transistor |
IB= 50mA VBE(on) Base-Emitter On Voltage IC= 5mA ; VCE= 5V ICBO Collector Cutoff Current IEBO Emitter cut-off current VCB= 160V; IE= 0 VEB = 5V,IC = 0 hFE DC Current Gain IC= 200mA.