Inchange Semiconductor 2SC2383
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2383 |
|---|---|
| Datasheet | 2SC2383 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High breakdown voltage●Low output capacitance
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Color TV class B sound output applications●Color TV vert.deflection output applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 0.9 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Pow Transistor INCHANGE Semiconductor 2SC2383ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-base breakdown voltage IC = 500μA，IE = 0 BVCEO Collector-emitter breakdown voltage IC = 10mA，IB = 0 BVEBO Emitter-base breakdown voltage IE = 500μA，IC = 0 VCE(sat) Collector-Emitter Sat...