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2SC2383 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Pow Transistor INCHANGE Semiconductor 2SC2383.

General Description

·High breakdown voltage ·Low output capacitance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV class B sound output applications ·Color TV vert.deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 0.9 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Pow Transistor INCHANGE Semiconductor 2SC2383 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-base breakdown voltage IC = 500μA,IE = 0 BVCEO Collector-emitter breakdown voltage IC = 10mA,IB = 0 BVEBO Emitter-base breakdown voltage IE = 500μA,IC = 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA ;

IB= 50mA VBE(on) Base-Emitter On Voltage IC= 5mA ;

VCE= 5V ICBO Collector Cutoff Current IEBO Emitter cut-off current VCB= 160V;

2SC2383 Distributor