Inchange Semiconductor 2SC2408
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2408 |
|---|---|
| Datasheet | 2SC2408 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz●High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●Designed for use in high frequency wide band amplifier.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 150 mA 0.6 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2408ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.5 μA hFE DC Current Gain IC= 50mA ; VCE= 10V 30 200 fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 3.5...