2SC2429 Datasheet PDF

DESCRIPTION

●High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)
●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for converters and inverters applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2429 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2429

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; RBE= ∞ 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturati...