2SC2486 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High Power Dissipation Complement to Type 2SA1062 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLU

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Datasheet Details

Part number	2SC2486
Manufacturer	Inchange Semiconductor
File Size	198.82 KB
Description	NPN Transistor
Datasheet	2SC2486 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High Power Dissipation ·Complement to Type 2SA1062 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2486 isc website：www.iscsemi.