Inchange Semiconductor 2SC2528
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2528 |
|---|---|
| Datasheet | 2SC2528 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)●Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.7A
●Complement to Type 2SA1078
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High frequency power amplifier, Audio power amplifier DirversABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.0 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2528 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2528ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 6 V VCE(sat) Coll...