Datasheet Details
| Part number | 2SC2535 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 168.97 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2535-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2535.
| Part number | 2SC2535 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 168.97 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2535-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 1 A 40 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2535 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2535 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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| 2SC2541 | NPN Power Transistor |
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