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2SC2556 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2556.

General Description

·High transistor frequency ·Low Saturation Voltage ·High VCBO ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency output amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCER Collector-Emitter Voltage RBE=150Ω 130 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 5 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2556 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=0.5A;

IB= 0.05A ICBO Collector Cutoff Current VCB= 130V ;

IE= 0 IEBO Emitter Cutoff Current VEB= 5V;

2SC2556 Distributor