Datasheet4U Logo Datasheet4U.com

2SC2579 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) Good Linearity of hFE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2579 Silicon NPN Power Transistor SavantIC
2SC2570A NPN Silicon Transistor NEC
2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR Renesas
2SC2577 SILICON POWER TRANSISTOR SavantIC
2SC2578 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2570A NPN Transistor
2SC2577 NPN Transistor
2SC2578 NPN Transistor
2SC2501 NPN Transistor
2SC2502 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2579 isc website：www.iscsemi.