Inchange Semiconductor 2SC2590
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2590 |
|---|---|
| Datasheet | 2SC2590 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Silicon NPN epitaxial planar type●High transition frequency
●Complementary to 2SA1110
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For low-frequency power amplificationABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.0 A 1.2 W 150 ℃ -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2590ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC=0.3A; IB= 0.03A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC=0.3A;...