Inchange Semiconductor 2SC2592
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2592 |
|---|---|
| Datasheet | 2SC2592 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Silicon NPN epitaxial planar type●High transition frequency
●Complement to Type 2SA1112
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●AF Driver,High power Amplifier complementary Pairs with 2SA1112.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5 V 1.0 A 20 W 150 ℃ -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SC2592ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA hFE1 DC Current Gain IC= 150mA ; VCE= 10V hFE2 DC Current Gain IC= 500mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz MIN TYP.