2SC2653H Datasheet PDF

DESCRIPTION

●High VCEO
●Large Pc

APPLICATIONS

●Color TV Horizontal
●Deflection Driver

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 480 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous Total Power Dissipation Pc @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.2 A 15 W 150 ℃ -55~150 ℃ isc Website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor Product Specification 2SC2653H

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Sustaining Voltage IC=5mA ; IB= 0; Ta=100℃ VCBO Collector-Base Sustaining Voltage IC=0.1mA ; IE= 0; Ta=100℃ VEBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=50mA; IB= 5mA ICBO Collector Cutoff Current VCB=200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 10mA ; VCE=10V COB Output Capacitance fT Current-Gain—Bandwidth Product IE= 0 ; VCB=50V;f= 1.0MHz IE=-10mA ; VCE=30V MIN TYP.