2SC2660 Overview
·Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V (Min) ·Large Collector Power Dissipation ·plement to Type 2SA1133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER...
