Inchange Semiconductor 2SC2681
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2681 |
|---|---|
| Datasheet | 2SC2681 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- V(BR)CEO= 115V(Min)●Good Linearity of hFE
●Complement to Type 2SA1141
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio frequency power amplifier●High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 115 V VCEO Collector-Emitter Voltage 115 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 2.0 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2681 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.45A VBE(on) Base-Emitter On Voltage IC= 4.5A; VCE= 2V ICBO Collector Cutoff Current...