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2SC2681 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= 115V(Min) Good Linearity of hFE Complement to Type 2SA1141 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier High frequency power amplifier ABSO

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 115V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1141 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 115 V VCEO Collector-Emitter Voltage 115 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 2.0 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2681 isc website：www.iscsemi.