Datasheet Details
| Part number | 2SC2682 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2682-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2682.
| Part number | 2SC2682 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2682-INCHANGE.pdf |
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·High voltage ·Low Saturation Voltage ·Complementary to 2SA1142 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2682 is designed for use in audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCER Collector-Emitter Voltage RBE=150Ω 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.1 A 10 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2682 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=50mA;
IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC=50mA;
IB= 5mA ICBO Collector Cutoff Current VCB= 180V ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2682 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2681 | NPN Transistor |
| 2SC2688 | NPN Transistor |
| 2SC2608 | NPN Transistor |
| 2SC2611 | NPN Transistor |
| 2SC2612 | NPN Transistor |
| 2SC2613 | NPN Transistor |
| 2SC2615 | NPN Transistor |
| 2SC2616 | NPN Transistor |
| 2SC2626 | NPN Transistor |
| 2SC2650 | Silicon NPN Power Transistor |