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2SC2690 Datasheet PDF

Inchange Semiconductor 2SC2690

The 2SC2690 is general purpose transistors designed For use in audio and radio frequency power amplifiers. The information contained herein is presented only as a guide for the applications of our products.
Part No. 2SC2690
Datasheet 2SC2690 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC2690 datasheet page 1 preview

DESCRIPTION

●High voltage and high fT
●Complementary to 2SA1220 PNP transistor
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

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●Suitable for use in driver stage of 50 to 100W audio Amplifiers and output stage of TV vertical deflection circuit

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.2 A 20 W -55~150 ℃ -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2690

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC=1A;...
2SC2690 page 2 preview