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2SC2690 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2690.

General Description

·High voltage and high fT ·Complementary to 2SA1220 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2690 is general purpose transistors designed For use in audio and radio frequency power amplifiers.

·Suitable for use in driver stage of 50 to 100W audio Amplifiers and output stage of TV vertical deflection circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.2 A 20 W -55~150 ℃ -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2690 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=1A;

IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC=1A;

2SC2690 Distributor