Inchange Semiconductor 2SC2705
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2705 |
|---|---|
| Datasheet | 2SC2705 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter sustaining Voltage : VCEO=150V(Min)●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio Frequency AmplifierAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 mA 800 mW 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2705 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VBE(sat) Base-Emitter Voltage IC= 10mA; VCE=5V ICEO Collector Cutoff Current VCE= 150V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE DC Current Gain IC=10mA ; VCE=5V 2SC2705 MIN TYP.