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2SC2705 - NPN Transistor

General Description

Collector-Emitter sustaining Voltage : VCEO=150V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 mA 800 mW 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2705 isc website：www.iscsemi.