Datasheet Details
| Part number | 2SC2705 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2705-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2705 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2705-INCHANGE.pdf |
|
|
|
·Collector-Emitter sustaining Voltage : VCEO=150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 mA 800 mW 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2705 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA;
IB= 1mA VBE(sat) Base-Emitter Voltage IC= 10mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2705 | TRANSISTOR | Toshiba Semiconductor |
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