Datasheet Details
| Part number | 2SC2723 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2723-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2723.
| Part number | 2SC2723 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2723-INCHANGE.pdf |
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak( Pulse) 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2723 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
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