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2SC2738 Datasheet PDF

Inchange Semiconductor 2SC2738

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC2738
Datasheet 2SC2738 Download
Manufacturer
Inchange Semiconductor
Description Silicon NPN Power Transistors
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2SC2738 datasheet page 1 preview

DESCRIPTION

●Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 400V(Min)
●High Speed Switching
●Low Collector Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for power amplifier, switching regulators, inverters, solenoid and relay drivers applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2738 isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2738

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 400 V VCE(sat) Coll...
2SC2738 page 2 preview