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2SC2749 Datasheet PDF

Inchange Semiconductor 2SC2749

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC2749
Datasheet 2SC2749 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC2749 datasheet page 1 preview

DESCRIPTION

●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min)
●High Switching Speed
●High Reliability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●High current switching industrial use
●General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2749 isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2749

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB=0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1...
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