Datasheet Details
| Part number | 2SC2750 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.01 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2750-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC2750.
| Part number | 2SC2750 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.01 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2750-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2750 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2SC2750 | NPN Transistor | ETC |
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